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part no. ZXMN3F318DN8 30v so8 asymmetrical dual n -channel enhancement mode mosfet summary device v (br)dss q g (nc) r ds (on) ( ) i d (a) 0.024 @ v gs = 10v 7.3 q1 30 12.9 0.039 @ v gs = 4.5v 5.7 0.035 @ v gs = 10v 6 q2 30 9 0.055 @ v gs = 4.5v 4.8 description this new generation dual trench mosfet from zetex features low on-resistance achievable with low (4.5v) gate drive . features ? low on-resistance ? 4.5v gate drive capability ? low profile soic package applications ? dc-dc converters ? smps ? load switching ? motor control q1 q2 ? backlighting ordering information device reel size (inches) tape width (mm) quantity per reel ZXMN3F318DN8ta 7 12 500 device marking pinout ? top view zxmn 3f318 issue 1 ? march 2008 1 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 absolute maximum ratings parameter symbol limit q1 limit q2 unit drain-source voltage v dss 30 30 v gate-source voltage v gs 20 20 v continuous drain current v gs =10v; t a =25 c (b) v gs =10v; t a =70 c (b) v gs =10v; t a =25 c (a) i d 7.3 5.9 5.7 6 4.8 4.6 a pulsed drain current (c) i dm 33 25 a continuous source current (body diode) (b) i s 3.5 3.3 a pulsed source current (body diode) (c) i sm 33 25 a power dissipation at t a =25 c (a) (d) linear derating factor p d 1.25 10 w mw/c power dissipation at t a =25 c (a) (e) linear derating factor p d 1.8 14 w mw/c power dissipation at t a =25 c (b) (d) linear derating factor p d 2.1 17 w mw/c operating and storage te mperature range t j , t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) (d) r ja 100 c/w junction to ambient (a) (e) r ja 70 c/w junction to ambient (b) (d) r ja 60 c/w junction to lead (f) r jl 53 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating - 25mm x 25mm fr4 pcb, d=0. 02, pulse width 300us ? pulse width limited by maximum junction temperature. (d) for a dual device with one active die. (e) for a device with two active die running at equal power. (f) thermal resistance from junction to sold er-point (at the end of the drain lead). issue 1 ? march 2008 2 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 q1 thermal characteristics 100m 1 10 1m 10m 100m 1 10 100 single pulse t amb =25c one active die r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 two active die one active die derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 t amb =25c one active die transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c one active die pulse power dissipation pulse width (s) maximum power (w) issue 1 ? march 2008 3 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 (1) measured under pulsed c onditions. pulse width = 300 s. duty cycle 2%. q1 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 30 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds = 30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.024 v gs = 10v, i d = 7.0a 0.039 v gs = 4.5v, i d = 6.0a forward transconductance (1) (3) g fs 16.5 s v ds = 15v, i d = 7a dynamic (3) input capacitance c iss 608 pf output capacitance c oss 132 pf reverse transfer capacitance c rss 71 pf v ds = 15v, v gs =0v f=1mhz switching (2) (3) turn-on-delay time t d(on) 2.9 ns rise time t r 3.3 ns turn-off delay time t d(off) 16 ns fall time t f 8 ns v dd = 15v, i d = 1a r g ? 6.0 , v gs = 10v total gate charge q g 12.9 nc gate-source charge q gs 2.5 nc gate drain charge q gd 2.52 nc v ds = 15v, v gs = 10v i d = 7a source-drain diode diode forward voltage (1) v sd 0.82 1.2 v t j =25 c, i s = 1.7a, v gs =0v reverse recovery time (3) t rr 12 ns reverse recovery charge (3) q rr 4.8 nc t j =25 c, i s = 2.2a, di/dt=100a/s (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subj ect to production testing. issue 1 ? march 2008 4 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 q1 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 4v 5v 10v 3.5v 2.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 10v 1.5v 2v 2.5v 4v 3.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 7a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 2.5v 4.5v v gs r ds(on) drain-source on-resistance (w) i d drain current (a) vgs = -3v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a) q1 typical characteristics issue 1 ? march 2008 5 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 11 0 0 100 200 300 400 500 600 700 800 900 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 01234567891011121314 0 1 2 3 4 5 6 7 8 9 10 i d = 7a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits issue 1 ? march 2008 6 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 q2 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 30 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds = 30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.035 v gs = 10v, i d = 5.0a 0.055 v gs = 4.5v, i d = 4a forward transconductance (1) (3) g fs 11.8 s v ds = 15v, i d = 5a dynamic (3) input capacitance c iss 430 pf output capacitance c oss 101 pf reverse transfer capacitance c rss 56 pf v ds = 15v, v gs =0v f=1mhz switching (2) (3) turn-on-delay time t d(on) 2.5 ns rise time t r 3.3 ns turn-off delay time t d(off) 11.5 ns fall time t f 6.3 ns v dd = 15v, i d = 1a r g ? 6.0 , v gs = 10v total gate charge q g 9 nc gate-source charge q gs 1.7 nc gate drain charge q gd 2 nc v ds = 15v, v gs = 10v i d = 5a source-drain diode diode forward voltage (1) v sd 0.82 1.2 v t j =25 c, i s = 1.7a, v gs =0v reverse recovery time (3) t rr 12 ns reverse recovery charge (3) q rr 4.9 nc t j =25 c, i s = 2.1a, di/dt=100a/s 1 measured under pulsed c onditions. pulse width = 300 s. duty cycle 2%. 2 switching characteristics are independent of operating junction temperature. 3 for design aid only, not subj ect to production testing. issue 1 ? march 2008 7 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 q2 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.01 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 4v 4.5v 10v 3.5v 2.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 10v 4.5v 2v 2.5v 4v 3.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 5a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 2.5v 4.5v v gs r ds(on) drain-source on-resistance ( source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a) issue 1 ? march 2008 8 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 q2 typical characteristics 11 0 0 100 200 300 400 500 600 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0123456789 0 1 2 3 4 5 6 7 8 9 10 i d = 5a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) issue 1 ? march 2008 9 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 packaging details ? so8 issue 1 ? march 2008 10 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 intentionally left blank issue 1 ? march 2008 11 www.zetex.com ? zetex semiconductors plc 2008 discontinued
ZXMN3F318DN8 definitions product change diodes incorporated reserves the right to al ter, without notice, specific ations, design, price or conditions of supply of any p roduct or service. customers are solely responsible for obtaining the latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as design i deas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoever is assum ed by diodes inc. with respect to the accuracy or use of su ch information, or infringement of patents or other intellectual property rights arisi ng from such use or otherwise. diodes inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort ( including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequ ential loss in the use of these circuit applications, under any circumstances. life support diodes zetex products are specific ally not authorized for use as critical components in life supp ort devices or systems without the express written approval of the chief executive officer of diodes incorporated . as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably ex pected to result in signif icant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expecte d to cause the failure of the life support device or to affect its safe ty or effectiveness. reproduction the product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduc ed for any purpose or form part of any or der or contract or be regarded as a repre sentation relating to the products or services concerned. terms and conditions all products are sold subjects to diodes in c. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prev ail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and conditions and prices, please contact your nearest zetex sales off ice. quality of product diodes zetex semiconductors limit ed is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts directly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com diodes inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales ch annels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suit able precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handl ing and transporting, and the nature of the device. the ext ent of damage can vary from immediate functional or param etric malfunction to degradation of function or performance in use over time. device s suspected of being affected should be replaced. green compliance diodes zetex is committed to environmental excellence in all as pects of its operations which in cludes meeting or exceeding regu latory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. all diodes zetex components are compliant with the rohs directive, and through this it is supporting its customers in their com pliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production has been discontinued datasheet status key: ?draft version? this term denotes a very early dat asheet version and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specificat ions may occur, at any time and without notice. ?issue? this term denotes an issued datasheet contai ning finalized specifications. however, changes to specifications may occur, at any time and without notice. diodes zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific diodes zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters diodes incorporated 15660 n dallas parkway suite 850, dallas tx75248, usa telephone (1) 972 385 2810 www.diodes.com ? 2008 published by diodes incorporated issue 1 ? march 2008 12 www.zetex.com ? zetex semiconductors plc 2008 discontinued

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